STMicroelectronics STGWA20H65DFB2
- STGWA20H65DFB2
- STMicroelectronics
- TRENCH GATE FIELD-STOP 650 V, 20
- Transistors - IGBTs - Single
- STGWA20H65DFB2 데이터시트
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 3474
- 현물 재고 / 공인 판매상 / 공장 잔여 재고
- 1년간의 품질 보장 》
- 요금을 보려면 클릭하세요
Part Number STGWA20H65DFB2 |
Category Transistors - IGBTs - Single |
Manufacturer STMicroelectronics |
Description TRENCH GATE FIELD-STOP 650 V, 20 |
Package Tube |
Series HB2 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 Long Leads |
Power - Max 147 W |
Input Type Standard |
Reverse Recovery Time (trr) 215 ns |
Current - Collector (Ic) (Max) 40 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A |
Gate Charge 56 nC |
Td (on/off) @ 25°C 16ns/78.8ns |
Test Condition 400V, 20A, 10Ohm, 15V |
Current - Collector Pulsed (Icm) 60 A |
Switching Energy 265µJ (on), 214µJ (off) |
Package_case TO-247-3 |
STGWA20H65DFB2 보증
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• 보장 된 품질
• 글로벌 액세스
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STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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