RN1106MFV,L3F(CT

Toshiba Semiconductor and Storage RN1106MFV,L3F(CT

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  • RN1106MFV,L3F(CT
  • Toshiba Semiconductor and Storage
  • TRANS PREBIAS NPN 50V 0.1A VESM
  • Transistors - Bipolar (BJT) - Single, Pre-Biased
  • RN1106MFV,L3F(CT 데이터시트
  • SOT-723
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 16615
  • 현물 재고 / 공인 판매상 / 공장 잔여 재고
  • 1년간의 품질 보장 》
  • 요금을 보려면 클릭하세요
Part Number
RN1106MFV,L3F(CT
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Package
Tape & Reel (TR)
Series
-
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Power - Max
150 mW
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA, 5V
Frequency - Transition
-
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
47 kOhms
Package_case
SOT-723

RN1106MFV,L3F(CT 보증

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Toshiba Semiconductor and Storage
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Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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