CMT-PLA3SB12340A is a three-phase 1200V/340A silicon carbide (SiC) MOSFET smart power module based on the CISSOID HADES2 chipset, integrating power switches and gate drivers.Cooled via a lightweight AlSiC flat substrate, the module meets the requirements of high power density converters, providing a SiC power module designed to operate at high junction temperatures of up to 175°C. Compared with IGBT modules, this solution can fully leverage the advantages of SiC technology to achieve high efficiency, high power density and high reliability through low switching losses and high temperature operation.Integration of gate drivers with power modules provides direct access to fully proven and optimized solutions in terms of switching speed and losses, robustness against dI/dt and dV/dt, and power stage protection (Desat, UVLO, AMC), SSD )
Application
Electric Vehicle (EV) Motor DriveHeavy duty motor drives and active rectifiersIndustrial motor drivesAerospace motor drives and electromechanical actuators