Toshiba 3rd Generation Silicon Carbide MOSFET

Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba's third generation SiC MOSFETs are designed for high power industrial applications such as 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters and bidirectional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs help reduce power dissipation and increase power density. Thanks to SiC technology, these devices offer higher voltages, faster switching, and lower on-resistance. Toshiba's third-generation chip design improves reliability.
characteristic

Ultra-low VF with Schottky barrier diode technology
Adopt new battery design, high reliability
Low Ron, RonQgd
80% lower Ron*Qgd for 3rd generation compared to Toshiba 2nd generation
Competitive Ron*Qgd and switching performance
Wider VGS rating
Wide VGS ratings help improve design reliability and simplify design
VGS - 10V to 25V
Low on-resistance and higher gate threshold voltage (Vth) help prevent failures such as accidental turn-on
application
Industrial Motor Drivers
battery charger
AC-DC/DC-DC Converters
Power factor correction circuit
energy storage system
solar energy
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